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TMS426169A-50DGE

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TMS426169A-50DGE

EDO DRAM, 1MX16, 50ns, CMOS, PDSO44

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS426169 Series EDO DRAM, part number TMS426169A-50DGE, offers a 1Mx16 memory organization with a maximum access time of 50ns. This CMOS component utilizes Fast Page Mode with EDO for enhanced performance, supporting RAS Only, CAS Before RAS, and Hidden Refresh modes. The device operates with a supply voltage range of 3.0V to 3.6V, nominal 3.3V. Its 44-terminal TSOP2 package (R-PDSO-G44) is suitable for surface-mount applications. This component is widely employed in computing systems, telecommunications infrastructure, and industrial automation where high-speed, reliable memory is critical. The memory density is 16 Mbit, with a refresh cycle requirement of 4096.

Additional Information

Series: TMS426169RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length20.9500
Width10.1600
TechnologyCMOS
Access_ModeFAST PAGE WITH EDO
Access_Time_Max50.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-G44
Memory_Density16777216.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals44
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP44/50,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles4096
Seated_Height_Max1.2000
Self_RefreshNo
Standby_Current_Max0.001000000000000
Supply_Current_Max130.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual

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