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TMS426160P-60DZ

Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

Texas Instruments TMS426160 series Fast Page DRAM, part number TMS426160P-60DZ, offers a 1M x 16 memory organization with a maximum access time of 60ns. This CMOS component utilizes a Fast Page mode operation and supports RAS Only, CAS Before RAS, Hidden Refresh, and Self Refresh modes. The device features a common I/O type and 3-state output characteristics. It is housed in a 42-lead Plastic Small Outline J-Lead (SOJ) package with a 1.27mm terminal pitch. Operating from a 3.0V to 3.6V supply, this DRAM is suitable for applications in computing and industrial systems requiring high-speed data buffering. Refresh cycles are 4096.

Additional Information

Series: TMS426160RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length27.3050
Width10.1600
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max60.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-J42
Memory_Density16777216.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals42
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_Equivalence_CodeSOJ42,.44
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles4096
Seated_Height_Max3.7600
Self_RefreshYes
Standby_Current_Max0.000200000000000
Supply_Current_Max90.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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