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TMS426160P-60DGE

Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO44

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

Texas Instruments TMS426160 series Fast Page DRAM, part number TMS426160P-60DGE, offers a 1Mx16 memory organization with a maximum access time of 60ns. This CMOS component utilizes a Fast Page mode for enhanced data transfer efficiency and supports RAS ONLY, CAS BEFORE RAS, HIDDEN REFRESH, and SELF REFRESH modes. The device operates asynchronously with a nominal supply voltage of 3.3V, ranging from 3.0V to 3.6V. It is housed in a 44-terminal TSOP2 (R-PDSO-G44) package with a terminal pitch of 0.80mm, suitable for surface mounting. Applications for this DRAM can be found in industrial automation, communication systems, and consumer electronics. The component features 3-state outputs and a refresh cycle of 4096.

Additional Information

Series: TMS426160RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length20.9500
Width10.1600
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max60.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-G44
Memory_Density16777216.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals44
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP44/50,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles4096
Seated_Height_Max1.2000
Self_RefreshYes
Standby_Current_Max0.000200000000000
Supply_Current_Max90.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual

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