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TMS426160AP-60DZ

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TMS426160AP-60DZ

Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TMS426160AP-60DZ is a 16Mbit (1M x 16) Fast Page DRAM, operating with a maximum access time of 60ns. This CMOS component utilizes a 1.270mm pitch SOJ42 package, designed for surface mounting. It supports 4096 refresh cycles and includes self-refresh capability. Key electrical characteristics include a nominal supply voltage of 3.3V, a standby current of 150µA (max), and a supply current of 90mA (max). The common I/O type and 3-state output characteristics make it suitable for various memory system designs. This device finds application in industrial automation, telecommunications infrastructure, and embedded systems requiring high-speed data storage.

Additional Information

Series: TMS426160RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_Time_Max60.0000000000000000
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-J42
Memory_Density16777216.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization1MX16
Memory_Width16
Number_of_Terminals42
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_Equivalence_CodeSOJ42,.44
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles4096
Self_RefreshYes
Standby_Current_Max0.000150000000000
Supply_Current_Max90.000000000000000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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