TMS426160AP-50DZ
Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO42Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS426160AP-50DZ is a 1M x 16 Fast Page Mode DRAM with a maximum access time of 50 ns. This CMOS device offers a memory density of 16Mbit and supports 4096 refresh cycles with self-refresh capability. The component features a 16-bit data bus and operates from a nominal 3.3V supply. Designed for surface mounting, it is housed in a 42-lead SOJ package (JESD-30 code R-PDSO-J42) with a terminal pitch of 1.270 mm. Typical applications include consumer electronics and industrial systems demanding high-speed data buffering. The I/O type is COMMON with 3-State output characteristics. Standby current is rated at a maximum of 150 µA.
Additional Information
Series: TMS426160RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 50.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PDSO-J42 |
| Memory_Density | 16777216.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 1MX16 |
| Memory_Width | 16 |
| Number_of_Terminals | 42 |
| Number_of_Words | 1048576.0000000000000000 |
| Number_of_Words_Code | 1M |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | SOJ |
| Package_Equivalence_Code | SOJ42,.44 |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE |
| Refresh_Cycles | 4096 |
| Self_Refresh | Yes |
| Standby_Current_Max | 0.000150000000000 |
| Supply_Current_Max | 110.000000000000000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | J BEND |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
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