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TMS426100-60DGB

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TMS426100-60DGB

Fast Page DRAM, 16MX1, 60ns, CMOS, PDSO24

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS426100 series Fast Page DRAM, part number TMS426100-60DGB, offers a 16M x 1 memory organization with a maximum access time of 60ns. This CMOS component operates in asynchronous mode with a supply voltage range of 3.0V to 3.6V, nominal 3.3V. It supports Fast Page mode access, along with RAS-only, CAS-before-RAS, and hidden refresh capabilities, requiring 4096 refresh cycles. The device is housed in a 24-lead PDSO package (TSOP2-R, JEDEC R-PDSO-G24) with a terminal pitch of 1.27mm, suitable for surface mounting. Operating temperatures range from 0°C to 70°C. This memory component is utilized in various industrial and consumer electronics applications demanding high-speed data access and efficient memory management.

Additional Information

Series: TMS426100RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length17.1400
Width7.6200
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max60.0000000000000000
Additional_FeatureRAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH
JESD_30_CodeR-PDSO-G24
Memory_Density16777216.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization16MX1
Memory_Width1
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals24
Number_of_Words16777216.0000000000000000
Number_of_Words_Code16m
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2-R
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles4096
Seated_Height_Max1.2000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch1.270
Terminal_PositionDual

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