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TMS4257-12SDL

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TMS4257-12SDL

Nibble Mode DRAM, 256KX1, 120ns, NMOS, PZIP16

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS4257 series NMOS DRAM, part number TMS4257-12SDL, offers a 256K x 1 memory organization with a 120ns maximum access time. This component features Nibble Mode operation, enhancing data throughput by allowing four bits to be accessed with a single row address strobe (RAS) and column address strobe (CAS) pair. Supported refresh modes include RAS-only, CAS-before-RAS, and hidden refresh cycles, providing flexibility in system design. The TMS4257-12SDL operates with a supply voltage range of 4.5V to 5.5V and is housed in a 16-terminal PZIP package with through-hole mounting. This device is suitable for applications requiring high-density, asynchronous memory, commonly found in industrial control and data acquisition systems.

Additional Information

Series: TMS4257RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length20.5000
Width2.8000
TechnologyNMOS
Access_ModeNIBBLE
Access_Time_Max120.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD_30_CodeR-PZIP-T16
Memory_Density262144.0000000000000000
Memory_IC_TypeNIBBLE MODE DRAM
Memory_Organization256KX1
Memory_Width1
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals16
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeZIP
Package_ShapeRectangular
Package_StyleIN-LINE
Refresh_Cycles256
Seated_Height_Max8.2600
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch2.540
Terminal_PositionZIG-ZAG

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