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TMS4257-12NE

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TMS4257-12NE

Nibble Mode DRAM, 256KX1, 120ns, NMOS, PDIP16

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS4257 series asynchronous NMOS DRAM, part number TMS4257-12NE. This component features a 256K x 1 memory organization, providing 262,144 bits of storage with a maximum access time of 120ns. Optimized for high-speed data throughput, it supports Nibble Mode operation, enabling efficient sequential data access. Additional refresh modes include RAS-only, CAS-before-RAS, and hidden refresh for flexible system design. Housed in a 16-lead PDIP package (R-PDIP-T16), this through-hole device operates with a supply voltage range of 4.5V to 5.5V and a nominal 5V. Its operating temperature range is -40°C to +85°C. Applications for this memory component are found in consumer electronics, industrial control systems, and telecommunications infrastructure.

Additional Information

Series: TMS4257RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length19.3050
Width7.6200
TechnologyNMOS
Access_ModeNIBBLE
Access_Time_Max120.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD_30_CodeR-PDIP-T16
Memory_Density262144.0000000000000000
Memory_IC_TypeNIBBLE MODE DRAM
Memory_Organization256KX1
Memory_Width1
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals16
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeAsynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeDIP
Package_ShapeRectangular
Package_StyleIN-LINE
Refresh_Cycles256
Seated_Height_Max5.0800
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch2.540
Terminal_PositionDual

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