TMS4256-8SDE
Page Mode DRAM, 256KX1, 80ns, NMOS, PZIP16Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS4256 series NMOS Page Mode DRAM, part number TMS4256-8SDE, offers a 256K x 1 memory organization with a maximum access time of 80ns. This component features RAS-only, CAS-before-RAS, and hidden refresh capabilities, supporting 256 refresh cycles. It operates asynchronously with a supply voltage range of 4.75V to 5.25V. The 16-pin PZIP package is designed for through-hole mounting. This DRAM is suitable for applications in industrial control, telecommunications, and consumer electronics. Its 3-state output characteristics and robust NMOS technology ensure reliable performance across an operating temperature range of -40°C to 85°C.
Additional Information
Series: TMS4256RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 20.5000 |
| Width | 2.8000 |
| Technology | NMOS |
| Access_Mode | PAGE |
| Access_Time_Max | 80.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD_30_Code | R-PZIP-T16 |
| Memory_Density | 262144.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 256KX1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | ZIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 256 |
| Seated_Height_Max | 8.2600 |
| Supply_Voltage_Max | 5.25000 |
| Supply_Voltage_Min | 4.75000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | ZIG-ZAG |
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