TMS4256-8FME
Page Mode DRAM, 256KX1, 80ns, NMOS, PQCC18Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS4256-8FME is a 256K x 1-bit NMOS Page Mode DRAM with an 80ns access time. This component features RAS-only, CAS-before-RAS, and hidden refresh capabilities, supporting 256 refresh cycles. It operates asynchronously with a nominal supply voltage of 5V, ranging from 4.75V to 5.25V. The device is housed in an 18-terminal PQCC (Plastic Chip Carrier) package (JESD-30 Code R-PQCC-J18), suitable for surface mounting. Its output characteristics are 3-state. The TMS4256 series is utilized in various applications including computing, telecommunications, and industrial control systems. The operating temperature range is -40°C to 85°C.
Additional Information
Series: TMS4256RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 12.4460 |
| Width | 7.3660 |
| Technology | NMOS |
| Access_Mode | PAGE |
| Access_Time_Max | 80.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD_30_Code | R-PQCC-J18 |
| Memory_Density | 262144.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 256KX1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | QCCJ |
| Package_Shape | Rectangular |
| Package_Style | CHIP CARRIER |
| Refresh_Cycles | 256 |
| Seated_Height_Max | 3.5300 |
| Supply_Voltage_Max | 5.25000 |
| Supply_Voltage_Min | 4.75000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | J BEND |
| Terminal_Pitch | 1.270 |
| Terminal_Position | QUAD |
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