TMS4256-20NE
Page Mode DRAM, 256KX1, 200ns, NMOS, PDIP16Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS4256-20NE is a 256K x 1 Page Mode NMOS DRAM with a maximum access time of 200ns. This component, part of the TMS4256 series, features a 256K density and a 1-bit wide organization. Supported refresh modes include RAS-only, CAS-before-RAS, and hidden refresh, with 256 refresh cycles required. The device operates asynchronously with a supply voltage range of 4.5V to 5.5V. Packaged in a 16-pin PDIP (R-PDIP-T16) with through-hole mounting and a 2.54mm terminal pitch, it is designed for industrial temperature ranges from -40°C to 85°C. Applications include memory subsystems in industrial control, consumer electronics, and telecommunications equipment. The output characteristics are 3-state.
Additional Information
Series: TMS4256RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 7.6200 |
| Technology | NMOS |
| Length | 19.3050 |
| Access_Mode | PAGE |
| Access_Time_Max | 200.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD_30_Code | R-PDIP-T16 |
| Memory_Density | 262144.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 256KX1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 256 |
| Seated_Height_Max | 5.0800 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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