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TMS4256-20FME

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TMS4256-20FME

Page Mode DRAM, 256KX1, 200ns, NMOS, PQCC18

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TMS4256-20FME is a 256K x 1-bit page mode dynamic random-access memory (DRAM). This NMOS technology component offers a maximum access time of 200ns and features RAS-only, CAS-before-RAS, and hidden refresh modes, supporting 256 refresh cycles. The memory organization is 256K words by 1-bit, with a total memory density of 262,144 bits. It operates asynchronously with a supply voltage range of 4.5V to 5.5V. The device is housed in an 18-terminal J-bend plastic chip carrier (PQCC) package, designed for surface mounting. This component is suitable for applications in industrial control, telecommunications, and embedded systems requiring high-density memory. The operating temperature range is from -40°C to +85°C.

Additional Information

Series: TMS4256RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width7.3660
TechnologyNMOS
Length12.4460
Access_ModePAGE
Access_Time_Max200.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD_30_CodeR-PQCC-J18
Memory_Density262144.0000000000000000
Memory_IC_TypePAGE MODE DRAM
Memory_Organization256KX1
Memory_Width1
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals18
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeAsynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeQCCJ
Package_ShapeRectangular
Package_StyleCHIP CARRIER
Refresh_Cycles256
Seated_Height_Max3.5300
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionQUAD

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