TMS4256-15SDE
Page Mode DRAM, 256KX1, 150ns, NMOS, PZIP16Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS4256 series NMOS DRAM, part number TMS4256-15SDE. This 256K x 1 device features page mode access for enhanced performance, with a maximum access time of 150ns. The memory organization is 256K x 1, yielding a total density of 262,144 bits. It supports various refresh modes including RAS ONLY, CAS BEFORE RAS, and HIDDEN REFRESH, with 256 refresh cycles. Operating from a 4.5V to 5.5V supply, this component is housed in a 16-terminal PZIP package with through-hole mounting. The NMOS technology and asynchronous operation make it suitable for applications in industrial control, telecommunications, and legacy computing systems requiring reliable memory solutions.
Additional Information
Series: TMS4256RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 2.8000 |
| Technology | NMOS |
| Length | 20.5000 |
| Access_Mode | PAGE |
| Access_Time_Max | 150.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD_30_Code | R-PZIP-T16 |
| Memory_Density | 262144.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 256KX1 |
| Memory_Width | 1 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | ZIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 256 |
| Seated_Height_Max | 8.2600 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | ZIG-ZAG |
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