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TMS4256-12SDE

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TMS4256-12SDE

Page Mode DRAM, 256KX1, 120ns, NMOS, PZIP16

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS4256 series NMOS Page Mode DRAM, part number TMS4256-12SDE, offers a 256K x 1 memory organization with a maximum access time of 120ns. This component operates asynchronously and features RAS-only, CAS-before-RAS, and hidden refresh modes, supporting 256 refresh cycles. The device utilizes a 16-pin Plastic ZIP (PZIP) package suitable for through-hole mounting with a terminal pitch of 2.54mm. Its output characteristics are 3-state, and it operates within a supply voltage range of 4.5V to 5.5V, with a nominal voltage of 5V. The operating temperature range is -40°C to +85°C. This memory component is commonly found in industrial control systems and legacy computing applications requiring robust and reliable memory solutions.

Additional Information

Series: TMS4256RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width2.8000
TechnologyNMOS
Length20.5000
Access_ModePAGE
Access_Time_Max120.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD_30_CodeR-PZIP-T16
Memory_Density262144.0000000000000000
Memory_IC_TypePAGE MODE DRAM
Memory_Organization256KX1
Memory_Width1
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals16
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeAsynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeZIP
Package_ShapeRectangular
Package_StyleIN-LINE
Refresh_Cycles256
Seated_Height_Max8.2600
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch2.540
Terminal_PositionZIG-ZAG

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