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TMS4256-12FME

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TMS4256-12FME

Page Mode DRAM, 256KX1, 120ns, NMOS, PQCC18

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TMS4256-12FME is a 256K x 1 bit page mode dynamic random-access memory (DRAM) component. This NMOS technology device offers an asynchronous operating mode with a maximum access time of 120ns. Its memory organization is 256K words by 1 bit, providing a memory density of 262,144 bits. The TMS4256 series supports multiple refresh modes, including RAS-only, CAS-before-RAS, and hidden refresh cycles, with 256 refresh cycles specified. This component is housed in an 18-terminal plastic chip carrier (PQCC) package, designed for surface mounting. Applications for this DRAM can be found in computing systems and data storage peripherals. The operating temperature range is -40°C to +85°C with a nominal supply voltage of 5V.

Additional Information

Series: TMS4256RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width7.3660
TechnologyNMOS
Length12.4460
Access_ModePAGE
Access_Time_Max120.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD_30_CodeR-PQCC-J18
Memory_Density262144.0000000000000000
Memory_IC_TypePAGE MODE DRAM
Memory_Organization256KX1
Memory_Width1
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals18
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeAsynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeQCCJ
Package_ShapeRectangular
Package_StyleCHIP CARRIER
Refresh_Cycles256
Seated_Height_Max3.5300
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionQUAD

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