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TMS4256-10NL

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TMS4256-10NL

Page Mode DRAM, 256KX1, 100ns, NMOS, PDIP16

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TMS4256-10NL is a 256K x 1-bit page mode Dynamic Random Access Memory (DRAM) featuring a maximum access time of 100 ns. This NMOS technology component operates asynchronously and utilizes page mode access for enhanced performance. It supports various refresh modes, including RAS-ONLY, CAS-BEFORE-RAS, and HIDDEN REFRESH, with 256 refresh cycles. The TMS4256 series device is housed in a 16-pin plastic dual in-line package (PDIP) with through-hole mounting and a terminal pitch of 2.54 mm. Its supply voltage ranges from 4.5V to 5.5V with a nominal voltage of 5V. This component is commonly found in memory subsystems for consumer electronics and industrial control applications.

Additional Information

Series: TMS4256RoHS Status: Manufacturer Lead Time: 0Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length19.3050
Width7.6200
TechnologyNMOS
Access_ModePAGE
Access_Time_Max100.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeSEPARATE
JESD_30_CodeR-PDIP-T16
Memory_Density262144.0000000000000000
Memory_IC_TypePAGE MODE DRAM
Memory_Organization256KX1
Memory_Width1
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals16
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeDIP
Package_Equivalence_CodeDIP16,.3
Package_ShapeRectangular
Package_StyleIN-LINE
Refresh_Cycles256
Seated_Height_Max5.0800
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch2.540
Terminal_PositionDual

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