TMS4256-10JL
Page Mode DRAM, 256KX1, 100ns, MOS, CDIP16Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS4256-10JL is a 256K x 1 bit page mode dynamic random-access memory (DRAM) component. This MOS technology device features a maximum access time of 100ns and operates with a nominal supply voltage of 5V. The memory organization is designed for 256K words with a 1-bit width, providing a total density of 262,144 bits. Its I/O type is separate, and output characteristics are 3-state. Packaged in a 16-pin ceramic dual in-line package (CDIP16), this through-hole component is suitable for applications requiring reliable memory solutions in industrial and consumer electronics. The operating temperature range is from 0°C to 70°C.
Additional Information
Series: TMS4256RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 100.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T16 |
| Memory_Density | 262144.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 256KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 262144.0000000000000000 |
| Number_of_Words_Code | 256k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 256 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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