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TMS418169P-80DGE

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TMS418169P-80DGE

EDO DRAM, 1MX16, 80ns, CMOS, PDSO44

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

Texas Instruments TMS418169 series EDO DRAM, part number TMS418169P-80DGE, offers a 1Mx16 memory organization with an 80ns maximum access time. This CMOS component utilizes FAST PAGE with EDO access modes and supports RAS ONLY, CAS BEFORE RAS, HIDDEN, and SELF REFRESH functionalities. The device features common I/O and 3-state output characteristics. Packaged in a 44-terminal TSOP2 (R-PDSO-G44) with a 0.80mm terminal pitch, it is designed for surface mounting. Operating within a 4.5V to 5.5V supply range, it is suitable for applications in industrial and consumer electronics requiring high-speed memory solutions. The refresh cycles are 1024, and self-refresh is supported.

Additional Information

Series: TMS418169RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length20.9500
Width10.1600
TechnologyCMOS
Access_ModeFAST PAGE WITH EDO
Access_Time_Max80.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-G44
Memory_Density16777216.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals44
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP44/50,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles1024
Seated_Height_Max1.2000
Self_RefreshYes
Standby_Current_Max0.000500000000000
Supply_Current_Max170.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual

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