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TMS418169P-70DGE

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TMS418169P-70DGE

EDO DRAM, 1MX16, 70ns, CMOS, PDSO44

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS418169P-70DGE is a 16 Mbit EDO DRAM organized as 1M words by 16 bits. This CMOS component offers a maximum access time of 70ns and operates with a 5V supply voltage. It supports Fast Page mode with EDO (Extended Data Out) for enhanced performance. Key features include RAS-only, CAS-before-RAS, hidden, and self-refresh modes, with 1024 refresh cycles. The device utilizes a 44-lead TSOP II package (JESD30 code R-PDSO-G44) with a 0.8mm terminal pitch, suitable for surface mounting. This memory solution finds application in systems requiring high-speed data access, including telecommunications infrastructure and industrial control systems.

Additional Information

Series: TMS418169RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length20.9500
Width10.1600
TechnologyCMOS
Access_ModeFAST PAGE WITH EDO
Access_Time_Max70.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-G44
Memory_Density16777216.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals44
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP44/50,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles1024
Seated_Height_Max1.2000
Self_RefreshYes
Standby_Current_Max0.000500000000000
Supply_Current_Max180.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual

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