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TMS418169A-60DGE

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TMS418169A-60DGE

EDO DRAM, 1MX16, 60ns, CMOS, PDSO44

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS418169A-60DGE is a 16Mbit EDO DRAM memory component organized as 1Mx16. This device operates with a maximum access time of 60ns and utilizes CMOS technology. It supports Fast Page mode with EDO capabilities, offering enhanced performance over standard page mode. Refresh options include RAS-only, CAS-before-RAS, and hidden refresh, with 1024 refresh cycles. The component features common I/O, 3-state outputs, and operates from a 4.5V to 5.5V supply range. Its package is a 44-terminal TSOP II (R-PDSO-G44) with a terminal pitch of 0.8mm, suitable for surface mounting. Applications for this memory type span industrial automation, consumer electronics, and telecommunications infrastructure.

Additional Information

Series: TMS418169RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length20.9500
Width10.1600
TechnologyCMOS
Access_ModeFAST PAGE WITH EDO
Access_Time_Max60.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-G44
Memory_Density16777216.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals44
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP44/50,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles1024
Seated_Height_Max1.2000
Self_RefreshNo
Standby_Current_Max0.001000000000000
Supply_Current_Max160.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual

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