TMS418169-60DZR
EDO DRAM, 1MX16, 60ns, CMOS, PDSO42Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS418169-60DZR is a 16Mbit EDO DRAM featuring a 1M x 16 memory organization. This component offers a maximum access time of 60ns and operates with CMOS technology. Key features include Fast Page with EDO access mode, supporting RAS Only, CAS Before RAS, and Hidden Refresh modes. The device is housed in a 42-lead SOJ (Shrink Small Outline J-Lead) package with a 1.27mm terminal pitch, suitable for surface mounting. With a standard supply voltage range of 4.5V to 5.5V and an operating temperature range of 0°C to 70°C, this DRAM is commonly employed in applications such as computer systems and embedded designs where high-speed memory is critical.
Additional Information
Series: TMS418169RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 10.1600 |
| Technology | CMOS |
| Length | 27.3050 |
| Access_Mode | FAST PAGE WITH EDO |
| Access_Time_Max | 60.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD_30_Code | R-PDSO-J42 |
| Memory_Density | 16777216.0000000000000000 |
| Memory_IC_Type | EDO DRAM |
| Memory_Organization | 1MX16 |
| Memory_Width | 16 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 42 |
| Number_of_Words | 1048576.0000000000000000 |
| Number_of_Words_Code | 1M |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | SOJ |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE |
| Refresh_Cycles | 1024 |
| Seated_Height_Max | 3.7600 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | J BEND |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
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