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TMS418160P-80RE

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TMS418160P-80RE

Fast Page DRAM, 1MX16, 80ns, CMOS, PDSO42

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS418160 series DRAM, part number TMS418160P-80RE, is a 16 Megabit (1M x 16) Fast Page Mode DRAM. This CMOS component offers an access time of 80ns and operates with a supply voltage of 5V (nominal). Key features include support for RAS ONLY, CAS BEFORE RAS, HIDDEN, and SELF REFRESH modes, with 1024 refresh cycles. The device is housed in a 42-lead PDSO package (R-PDSO-J42) with a J-bend terminal form and a pitch of 1.27mm, designed for surface mounting. This memory IC is commonly utilized in industrial equipment, consumer electronics, and telecommunications applications requiring reliable and accessible memory solutions.

Additional Information

Series: TMS418160RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width10.1600
TechnologyCMOS
Length27.3800
Access_ModeFAST PAGE
Access_Time_Max80.0000000000000000
Additional_FeatureRAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH
JESD_30_CodeR-PDSO-J42
Memory_Density16777216.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals42
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles1024
Seated_Height_Max3.7600
Self_RefreshYes
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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