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TMS418160P-80DZ

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TMS418160P-80DZ

Fast Page DRAM, 1MX16, 80ns, CMOS, PDSO42

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS418160 Fast Page DRAM, part number TMS418160P-80DZ, offers a 16,777,216 bit density organized as 1M words by 16 bits. This CMOS component features an 80ns maximum access time and supports Fast Page mode operation with RAS only, CAS before RAS, hidden refresh, and self-refresh capabilities. The device operates asynchronously with a 4.5V to 5.5V supply voltage range and a nominal 5V. Its 42-lead SOJ package (R-PDSO-J42) is designed for surface mounting with a 1.27mm terminal pitch. This memory component is suitable for applications within the consumer electronics and industrial sectors requiring high-speed data access.

Additional Information

Series: TMS418160RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length27.3050
Width10.1600
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max80.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-J42
Memory_Density16777216.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals42
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_Equivalence_CodeSOJ42,.44
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles1024
Seated_Height_Max3.7600
Self_RefreshYes
Standby_Current_Max0.000500000000000
Supply_Current_Max170.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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