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TMS418160P-70RE

Fast Page DRAM, 1MX16, 70ns, CMOS, PDSO42

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TMS418160P-70RE is a 16,777,216-bit Fast Page Mode DRAM with a memory organization of 1M words by 16 bits. This component offers a maximum access time of 70ns and operates using CMOS technology. It supports essential DRAM functions including RAS-only refresh, CAS-before-RAS refresh, hidden refresh, and self-refresh. The device is housed in a 42-lead SOJ (Small Outline J-Lead) package, identified by the R-PDSO-J42 code, with a terminal pitch of 1.27mm. Operating from a nominal 5V supply (4.5V to 5.5V), it is suitable for applications requiring high-speed memory access in industries such as consumer electronics, industrial control systems, and telecommunications equipment. The operating temperature range is from 0°C to 70°C.

Additional Information

Series: TMS418160RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width10.1600
TechnologyCMOS
Length27.3800
Access_ModeFAST PAGE
Access_Time_Max70.0000000000000000
Additional_FeatureRAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH
JESD_30_CodeR-PDSO-J42
Memory_Density16777216.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals42
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles1024
Seated_Height_Max3.7600
Self_RefreshYes
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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