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TMS418160A-50DZ

Fast Page DRAM, 1MX16, 50ns, MOS, PDSO42

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

Texas Instruments TMS418160 Series Fast Page DRAM, part number TMS418160A-50DZ, offers a 16 Mbit memory density with a 1M x 16 organization. This MOS technology component features a maximum access time of 50 ns and operates asynchronously. Supporting RAS Only, CAS Before RAS, and Hidden refresh modes, it requires 1024 refresh cycles. The device utilizes a 3-state output characteristic and is housed in a 42-lead SOJ (Small Outline J-Lead) plastic package with a 1.27mm terminal pitch. Operating voltage ranges from 4.5V to 5.5V with a nominal 5V supply. This component finds application in telecommunications, industrial control systems, and consumer electronics.

Additional Information

Series: TMS418160RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length27.3050
Width10.1600
TechnologyMOS
Access_ModeFAST PAGE
Access_Time_Max50.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-J42
Memory_Density16777216.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals42
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_Equivalence_CodeSOJ42,.44
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles1024
Seated_Height_Max3.7600
Self_RefreshNo
Standby_Current_Max0.001000000000000
Supply_Current_Max180.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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