TMS418160-80RE
Fast Page DRAM, 1MX16, 80ns, CMOS, PDSO42Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS418160-80RE is a 16,777,216-bit Fast Page Mode DRAM with a memory organization of 1Mx16. This component offers an 80ns maximum access time and operates using CMOS technology. Key features include RAS only refresh, CAS before RAS refresh, and hidden refresh modes. The device is housed in a 42-lead Small Outline J-Lead (SOJ) package with a J-bend terminal form and a 1.27mm terminal pitch. Operating from a 4.5V to 5.5V supply voltage, it is suitable for applications within the 0°C to 70°C temperature range. This DRAM is designed for use in various electronic systems including consumer electronics, industrial automation, and telecommunications infrastructure.
Additional Information
Series: TMS418160RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 27.3800 |
| Width | 10.1600 |
| Technology | CMOS |
| Access_Mode | FAST PAGE |
| Access_Time_Max | 80.0000000000000000 |
| Additional_Feature | RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
| JESD_30_Code | R-PDSO-J42 |
| Memory_Density | 16777216.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 1MX16 |
| Memory_Width | 16 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 42 |
| Number_of_Words | 1048576.0000000000000000 |
| Number_of_Words_Code | 1M |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | SOJ |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE |
| Refresh_Cycles | 1024 |
| Seated_Height_Max | 3.7600 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | J BEND |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
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