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TMS418160-70RE

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TMS418160-70RE

Fast Page DRAM, 1MX16, 70ns, CMOS, PDSO42

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS418160-70RE is a 16,777,216 bit Fast Page Mode Dynamic Random-Access Memory organized as 1,048,576 words by 16 bits. This CMOS device features a maximum access time of 70ns and operates from a 4.5V to 5.5V supply. The TMS418160 series supports essential refresh modes including RAS Only, CAS Before RAS, and Hidden Refresh, facilitating efficient data retention. Its 42-lead Plastic Small Outline (SOJ) package with a 1.27mm terminal pitch is designed for surface mounting. This component is suitable for applications in consumer electronics, industrial control systems, and telecommunications infrastructure.

Additional Information

Series: TMS418160RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length27.3800
Width10.1600
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max70.0000000000000000
Additional_FeatureRAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH
JESD_30_CodeR-PDSO-J42
Memory_Density16777216.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals42
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles1024
Seated_Height_Max3.7600
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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