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TMS418160-60RE

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TMS418160-60RE

Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TMS418160-60RE is a 16 Mbit (1M x 16) Fast Page Mode DRAM utilizing CMOS technology. This component offers a maximum access time of 60 ns, supporting critical timing requirements for high-performance systems. Key operating features include RAS-only refresh, CAS-before-RAS refresh, and hidden refresh modes, facilitating efficient memory management. The device is housed in a 42-lead SOJ package (JESD30 code R-PDSO-J42) with a terminal pitch of 1.27 mm, designed for surface mounting. Operating within a temperature range of 0°C to 70°C, it requires a supply voltage of 5V ±10%. This DRAM is suitable for applications in telecommunications, industrial control, and consumer electronics where reliable memory solutions are paramount.

Additional Information

Series: TMS418160RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length27.3800
Width10.1600
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max60.0000000000000000
Additional_FeatureRAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH
JESD_30_CodeR-PDSO-J42
Memory_Density16777216.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals42
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles1024
Seated_Height_Max3.7600
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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