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TMS417809A-60DZ

EDO DRAM, 2MX8, 60ns, CMOS, PDSO28

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS417809A-60DZ is a 2,097,152-word by 8-bit EDO DRAM. This component utilizes CMOS technology and offers an access time of 60ns. Its memory organization is 2M x 8, supporting fast page mode with Extended Data Out (EDO) capabilities. The device features RAS-only, CAS-before-RAS, and hidden refresh modes for efficient operation. It operates from a supply voltage range of 4.5V to 5.5V. The TMS417809A-60DZ is housed in a 28-lead SOJ (Small Outline J-leaded) plastic package, designed for surface mounting. This memory component finds application in various computing and embedded systems requiring high-speed data access.

Additional Information

Series: TMS417809RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length18.4150
Width10.1600
TechnologyCMOS
Access_ModeFAST PAGE WITH EDO
Access_Time_Max60.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-J28
Memory_Density16777216.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization2MX8
Memory_Width8
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals28
Number_of_Words2097152.0000000000000000
Number_of_Words_Code2M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_Equivalence_CodeSOJ28,.44
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles2048
Seated_Height_Max3.7600
Self_RefreshNo
Standby_Current_Max0.001000000000000
Supply_Current_Max110.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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