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TMS417400-80DGB

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TMS417400-80DGB

Fast Page DRAM, 4MX4, 80ns, CMOS, PDSO24

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TMS417400-80DGB is a 16 Mbit Fast Page DRAM organized as 4M words by 4 bits. This CMOS memory component features an access time of 80ns and operates with a supply voltage range of 4.5V to 5.5V. Key operational characteristics include RAS-only and CAS-before-RAS refresh modes, with 2048 refresh cycles required. The component is housed in a 24-lead PDSO (TSOP2-R) package with a 1.27mm terminal pitch, suitable for surface-mount applications. This memory device finds application in various computing and industrial systems requiring high-density, fast page mode memory.

Additional Information

Series: TMS417400RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length17.1400
Width7.6200
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max80.0000000000000000
Additional_FeatureRAS ONLY; CAS BEFORE RAS REFRESH
JESD_30_CodeR-PDSO-G24
Memory_Density16777216.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization4MX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals24
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2-R
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles2048
Seated_Height_Max1.2000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch1.270
Terminal_PositionDual

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