TMS416800P-70DE
Fast Page DRAM, 2MX8, 70ns, CMOS, PDSO32Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS416800 Series 2Mx8 Fast Page DRAM, part number TMS416800P-70DE, offers a 16,777,216-bit memory density with a 70ns maximum access time. This CMOS component features a 2,097,152-word by 8-bit organization and operates asynchronously. Key functionalities include RAS ONLY, CAS BEFORE RAS, HIDDEN refresh, and self-refresh capabilities. The device supports 4096 refresh cycles and is housed in a 32-lead TSOP2 (R-PDSO-G32) package suitable for surface mounting. Typical applications span industrial automation, consumer electronics, and telecommunications equipment requiring robust memory solutions. The operating voltage range is 4.5V to 5.5V with a nominal 5V supply.
Additional Information
Series: TMS416800RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 10.1600 |
| Technology | CMOS |
| Length | 20.9500 |
| Access_Mode | FAST PAGE |
| Access_Time_Max | 70.0000000000000000 |
| Additional_Feature | RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH |
| JESD_30_Code | R-PDSO-G32 |
| Memory_Density | 16777216.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 2MX8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 32 |
| Number_of_Words | 2097152.0000000000000000 |
| Number_of_Words_Code | 2M |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | TSOP2 |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE, THIN PROFILE |
| Refresh_Cycles | 4096 |
| Seated_Height_Max | 1.2000 |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | Gull Wing |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
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