TMS416800-70DZ
Fast Page DRAM, 2MX8, 70ns, CMOS, PDSO28Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS416800-70DZ is a 2Mx8 Fast Page Mode DRAM with a 70ns access time. This CMOS component, housed in a 28-lead SOJ (Small Outline J-lead) package, offers a memory density of 16Mbit. It supports asynchronous operation and features RAS-only, CAS-before-RAS, and hidden refresh modes for efficient data retention. The device operates with a supply voltage range of 4.5V to 5.5V, with a nominal value of 5V. Its 3-state outputs and surface-mount capability make it suitable for various applications within the industrial and telecommunications sectors. The TMS416800 series is designed for high-speed data buffering and memory expansion.
Additional Information
Series: TMS416800RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 18.4150 |
| Width | 10.1600 |
| Technology | CMOS |
| Access_Mode | FAST PAGE |
| Access_Time_Max | 70.0000000000000000 |
| Additional_Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD_30_Code | R-PDSO-J28 |
| Memory_Density | 16777216.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 2MX8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 28 |
| Number_of_Words | 2097152.0000000000000000 |
| Number_of_Words_Code | 2M |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | SOJ |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE |
| Refresh_Cycles | 4096 |
| Seated_Height_Max | 3.7600 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | J BEND |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
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