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TMS416800-60DZ

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TMS416800-60DZ

Fast Page DRAM, 2MX8, 60ns, CMOS, PDSO28

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS416800 Series Fast Page DRAM, part number TMS416800-60DZ. This 16Mbit DRAM features a 2M x 8 memory organization with a maximum access time of 60ns. It operates using CMOS technology and supports Fast Page mode access. Key refresh modes include RAS Only, CAS Before RAS, and Hidden Refresh, with 4096 refresh cycles required. The component is housed in a 28-lead PLASTIC SMALL OUTLINE Package (SOJ) with J-bend terminals. This device is suitable for applications in industrial automation, consumer electronics, and memory expansion systems. Operating supply voltage ranges from 4.5V to 5.5V with a nominal voltage of 5V. The operating temperature range is 0°C to 70°C.

Additional Information

Series: TMS416800RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length18.4150
Width10.1600
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max60.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD_30_CodeR-PDSO-J28
Memory_Density16777216.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization2MX8
Memory_Width8
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals28
Number_of_Words2097152.0000000000000000
Number_of_Words_Code2M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles4096
Seated_Height_Max3.7600
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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