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TMS416400P-60DGB

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TMS416400P-60DGB

Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS416400P-60DGB is a 16Mbit (4Mx4) Fast Page Mode DRAM. This CMOS component offers a maximum access time of 60ns and operates with a nominal supply voltage of 5V. Key operational features include RAS Only, CAS Before RAS, Battery Backup, and Self Refresh capabilities. The memory organization is 4M words by 4 bits, supporting 4096 refresh cycles. This device is housed in a 24-lead TSOP2 package (R-PDSO-G24) with a terminal pitch of 1.27mm, designed for surface mounting. Applications for this memory component span industrial control, consumer electronics, and telecommunications equipment. The operating temperature range is 0°C to 70°C.

Additional Information

Series: TMS416400RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length17.1400
Width7.6200
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max60.0000000000000000
Additional_FeatureRAS ONLY; CAS BEFORE RAS; BATTERY BACKUP; SELF REFRESH
JESD_30_CodeR-PDSO-G24
Memory_Density16777216.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization4MX4
Memory_Width4
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals24
Number_of_Words4194304.0000000000000000
Number_of_Words_Code4M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2-R
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles4096
Seated_Height_Max1.2000
Self_RefreshYes
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch1.270
Terminal_PositionDual

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