TMS4164-25JDL
Page Mode DRAM, 64KX1, 250ns, MOS, CDIP16Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS4164-25JDL is a 64K x 1-bit Page Mode Dynamic Random Access Memory (DRAM) device. Operating with a maximum access time of 250ns, this MOS technology component features a 256 refresh cycle requirement and a standard 5V supply voltage. The memory organization is 64K words by 1 data bit. It utilizes separate I/O and offers 3-state output characteristics. Encased in a 16-lead Ceramic Dual In-line Package (CDIP), this through-hole device is suitable for applications requiring cost-effective memory solutions across various industrial and consumer electronics sectors.
Additional Information
Series: TMS4164RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 250.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T16 |
| Memory_Density | 65536.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 64KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 65536.0000000000000000 |
| Number_of_Words_Code | 64k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 256 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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