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TMS4164-12NL

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TMS4164-12NL

Page Mode DRAM, 64KX1, 120ns, NMOS, PDIP16

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS4164-12NL is a 64K x 1 bit page mode dynamic random-access memory (DRAM) component. This NMOS device features an access time of 120 nanoseconds and operates with a 5V nominal supply voltage. The memory organization is 64K words by 1 bit, utilizing a page mode access for enhanced data transfer efficiency. It supports RAS-only refresh with 256 refresh cycles and employs separate input/output. The output characteristics are 3-state, and the component is housed in a 16-lead plastic dual in-line package (PDIP) with through-hole mounting. Suitable for legacy systems and specialized applications requiring its specific performance parameters, this component finds utility in various industrial and consumer electronics designs.

Additional Information

Series: TMS4164RoHS Status: Manufacturer Lead Time: 0Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length19.3050
Width7.6200
TechnologyNMOS
Access_ModePAGE
Access_Time_Max120.0000000000000000
Additional_FeatureRAS ONLY REFRESH
I_O_TypeSEPARATE
JESD_30_CodeR-PDIP-T16
Memory_Density65536.0000000000000000
Memory_IC_TypePAGE MODE DRAM
Memory_Organization64KX1
Memory_Width1
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals16
Number_of_Words65536.0000000000000000
Number_of_Words_Code64k
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeDIP
Package_Equivalence_CodeDIP16,.3
Package_ShapeRectangular
Package_StyleIN-LINE
Refresh_Cycles256
Seated_Height_Max5.0800
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch2.540
Terminal_PositionDual

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