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TMS416169P-70DGE

EDO DRAM, 1MX16, 70ns, CMOS, PDSO44

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS416169 EDO DRAM, part number TMS416169P-70DGE, offers a 1Mx16 memory organization with an access time of 70ns. This CMOS component utilizes Fast Page Mode with EDO capabilities, supporting RAS-only, CAS-before-RAS, hidden, and self-refresh operations. The device features a 44-terminal TSOP2 package with a 0.80mm terminal pitch, designed for surface mounting. Its 16-bit data bus is common I/O. Applications can be found in networking equipment, industrial control systems, and legacy computing platforms requiring high-speed data storage. The operating voltage range is 4.5V to 5.5V, with a typical 5V supply. Standby current is rated at a maximum of 0.5mA, and the active supply current is 80mA.

Additional Information

Series: TMS416169RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length20.9500
Width10.1600
TechnologyCMOS
Access_ModeFAST PAGE WITH EDO
Access_Time_Max70.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-G44
Memory_Density16777216.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals44
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP44/50,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles4096
Seated_Height_Max1.2000
Self_RefreshYes
Standby_Current_Max0.000500000000000
Supply_Current_Max80.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual

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