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TMS416169P-60DZ

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TMS416169P-60DZ

EDO DRAM, 1MX16, 60ns, CMOS, PDSO42

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS416169 family EDO DRAM, part number TMS416169P-60DZ. This 16 Mbit memory device features a 1Mx16 organization and a maximum access time of 60ns. It utilizes EDO (Extended Data Output) technology, supporting fast page mode with EDO and offering RAS only, CAS before RAS, and hidden refresh modes. The device operates with a 4.5V to 5.5V supply voltage range and employs CMOS technology. It is housed in a 42-lead SOJ (Small Outline J-Lead) package with a terminal pitch of 1.27mm. The TMS416169P-60DZ is suitable for applications in industrial automation, telecommunications, and consumer electronics requiring high-speed data buffering. This component supports self-refresh functionality.

Additional Information

Series: TMS416169RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length27.3050
Width10.1600
TechnologyCMOS
Access_ModeFAST PAGE WITH EDO
Access_Time_Max60.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-J42
Memory_Density16777216.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals42
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_Equivalence_CodeSOJ42,.44
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles4096
Seated_Height_Max3.7600
Self_RefreshYes
Standby_Current_Max0.000500000000000
Supply_Current_Max90.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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