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TMS416169-80DGE

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TMS416169-80DGE

EDO DRAM, 1MX16, 80ns, CMOS, PDSO44

Manufacturer: Texas Instruments

Categories: DRAMs

Quality Control: Learn More

Texas Instruments TMS416169-80DGE is a 16Mbit EDO DRAM organized as 1M words by 16 bits. This CMOS component features an 80ns maximum access time and supports Fast Page Mode with EDO capabilities. It offers RAS Only, CAS Before RAS, and Hidden Refresh modes for efficient memory management. The device operates asynchronously with a supply voltage range of 4.5V to 5.5V and a nominal 5V. Its 44-terminal TSOP II package (R-PDSO-G44) is suitable for surface-mount applications. This memory IC is commonly found in computing systems, telecommunications infrastructure, and industrial control applications requiring high-speed data buffering.

Additional Information

Series: TMS416169RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length20.9500
Width10.1600
TechnologyCMOS
Access_ModeFAST PAGE WITH EDO
Access_Time_Max80.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-G44
Memory_Density16777216.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals44
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP44/50,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles4096
Seated_Height_Max1.2000
Self_RefreshNo
Standby_Current_Max0.001000000000000
Supply_Current_Max70.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual

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