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TMS416169-70DZ

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TMS416169-70DZ

EDO DRAM, 1MX16, 70ns, CMOS, PDSO42

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TMS416169-70DZ is a 16Mbit EDO DRAM organized as 1M words by 16 bits. This high-performance memory component features an extended data output (EDO) capability, enabling faster data retrieval compared to standard Fast Page Mode DRAM. With a maximum access time of 70ns and operating at a 5V supply voltage, it utilizes advanced CMOS technology for efficient operation. The TMS416169-70DZ supports RAS-only, CAS-before-RAS, and hidden refresh modes, with 4096 refresh cycles. It is housed in a 42-lead SOJ (Small Outline J-Lead) package, suitable for surface mounting. This component is commonly employed in computing systems, networking equipment, and industrial control applications requiring rapid memory access.

Additional Information

Series: TMS416169RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length27.3050
Width10.1600
TechnologyCMOS
Access_ModeFAST PAGE WITH EDO
Access_Time_Max70.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-J42
Memory_Density16777216.0000000000000000
Memory_IC_TypeEDO DRAM
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals42
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_Equivalence_CodeSOJ42,.44
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles4096
Seated_Height_Max3.7600
Self_RefreshNo
Standby_Current_Max0.001000000000000
Supply_Current_Max80.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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