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TMS416160P-80DGE

Fast Page DRAM, 1MX16, 80ns, CMOS, PDSO44

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS416160 series Fast Page DRAM, part number TMS416160P-80DGE, offers a 1M x 16 memory organization with an 80ns maximum access time. This CMOS component utilizes a FAST PAGE mode for efficient data transfer and supports RAS ONLY/CAS BEFORE RAS, HIDDEN REFRESH, and SELF REFRESH operational modes. The memory density is 16 Mbit, with 4096 refresh cycles. It operates asynchronously with a supply voltage range of 4.5V to 5.5V and a nominal voltage of 5V. The TMS416160P-80DGE is housed in a 44-terminal TSOP2 package (R-PDSO-G44) with a 0.80mm terminal pitch, suitable for surface mounting. Typical applications include consumer electronics and industrial control systems.

Additional Information

Series: TMS416160RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length20.9500
Width10.1600
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max80.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-G44
Memory_Density16777216.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals44
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP44/50,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles4096
Seated_Height_Max1.2000
Self_RefreshYes
Standby_Current_Max0.000500000000000
Supply_Current_Max70.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual

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