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TMS416160P-60DGE

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TMS416160P-60DGE

Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO44

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS416160P-60DGE is a 1Mx16 Fast Page Mode DRAM with a maximum access time of 60ns. This CMOS component, organized as 1 million words by 16 bits, offers a memory density of 16Mbit. It supports various refresh modes including RAS-only, CAS-before-RAS, hidden, and self-refresh cycles for 4096 refresh rows. The device operates asynchronously with a common I/O and 3-state output characteristics. Designed for surface mounting, it is housed in a 44-lead TSOP II package (R-PDSO-G44) with gull wing terminals and a 0.8mm pitch. Operating voltage ranges from 4.5V to 5.5V, with a nominal 5V supply. This component is utilized in applications such as industrial automation and consumer electronics.

Additional Information

Series: TMS416160RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length20.9500
Width10.1600
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max60.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-G44
Memory_Density16777216.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals44
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2
Package_Equivalence_CodeTSOP44/50,.46,32
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles4096
Seated_Height_Max1.2000
Self_RefreshYes
Standby_Current_Max0.000500000000000
Supply_Current_Max90.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch0.800
Terminal_PositionDual

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