TMS416160A-60DZ
Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS416160A-60DZ is a 16 Mbit (1M x 16) Fast Page DRAM designed for high-speed memory applications. This component features a 60ns access time and operates with a 5V nominal supply voltage, utilizing CMOS technology for efficient performance. The memory organization of 1M words by 16 bits provides a total density of 16,777,216 bits. It is housed in a 42-lead Plastic Small Outline J-Lead (SOJ) package. The TMS416160 series DRAMs are commonly found in industrial automation, consumer electronics, and telecommunications equipment where reliable memory solutions are critical. The device supports Common I/O and 3-State outputs, with refresh cycles managed via 4096 refresh counts. Its surface-mount capability and 1.27mm terminal pitch facilitate integration into compact PCB designs.
Additional Information
Series: TMS416160RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 60.0000000000000000 |
| I_O_Type | COMMON |
| JESD_30_Code | R-PDSO-J42 |
| Memory_Density | 16777216.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 1MX16 |
| Memory_Width | 16 |
| Number_of_Terminals | 42 |
| Number_of_Words | 1048576.0000000000000000 |
| Number_of_Words_Code | 1M |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | SOJ |
| Package_Equivalence_Code | SOJ42,.44 |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE |
| Refresh_Cycles | 4096 |
| Self_Refresh | No |
| Standby_Current_Max | 0.001000000000000 |
| Supply_Current_Max | 90.000000000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | J BEND |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
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