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TMS416160-80DZ

Fast Page DRAM, 1MX16, 80ns, CMOS, PDSO42

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS416160 series Fast Page DRAM, part number TMS416160-80DZ, offers a 16Mbit memory density organized as 1M words by 16 bits. This CMOS component features an 80ns maximum access time and supports Fast Page mode operation with RAS Only, CAS Before RAS, and Hidden Refresh capabilities. The memory controller interfaces via a common I/O structure. This 42-terminal device is housed in a plastic small outline package (SOJ) with a J-bend terminal form, suitable for surface mounting. It operates within a temperature range of 0°C to 70°C and requires a nominal supply voltage of 5V, with a maximum of 5.5V. Applications include memory subsystems in consumer electronics and industrial control systems.

Additional Information

Series: TMS416160RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width10.1600
TechnologyCMOS
Length27.3050
Access_ModeFAST PAGE
Access_Time_Max80.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-J42
Memory_Density16777216.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals42
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_Equivalence_CodeSOJ42,.44
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles4096
Seated_Height_Max3.7600
Self_RefreshNo
Standby_Current_Max0.001000000000000
Supply_Current_Max70.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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