TMS416160-60RE
Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS416160-60RE is a 16 Megabit (1M x 16) Fast Page Mode DRAM operating at 60ns access time. This CMOS component features a 1,048,576 word x 16-bit organization and supports RAS-only, CAS-before-RAS, and hidden refresh modes with 4096 refresh cycles. It operates asynchronously with a supply voltage range of 4.5V to 5.5V and a nominal 5V. The device is housed in a 42-lead Small Outline J-Lead (SOJ) package with a 1.27mm terminal pitch. Applications for this memory component include consumer electronics and industrial automation systems.
Additional Information
Series: TMS416160RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 10.1600 |
| Technology | CMOS |
| Length | 27.3800 |
| Access_Mode | FAST PAGE |
| Access_Time_Max | 60.0000000000000000 |
| Additional_Feature | RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
| JESD_30_Code | R-PDSO-J42 |
| Memory_Density | 16777216.0000000000000000 |
| Memory_IC_Type | FAST PAGE DRAM |
| Memory_Organization | 1MX16 |
| Memory_Width | 16 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 42 |
| Number_of_Words | 1048576.0000000000000000 |
| Number_of_Words_Code | 1M |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | SOJ |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE |
| Refresh_Cycles | 4096 |
| Seated_Height_Max | 3.7600 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | J BEND |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
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