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TMS416160-60DZ

Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42

Manufacturer: Texas Instruments

Categories: DRAMs

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The Texas Instruments TMS416160-60DZ is a 16 Megabit (1M x 16) Fast Page Mode DRAM. This CMOS component offers a maximum access time of 60ns, supporting asynchronous operation. Memory organization is 1M words by 16 bits, with a total density of 16,777,216 bits. The device features RAS-only, CAS-before-RAS, and hidden refresh modes, with 4096 refresh cycles required. It is housed in a 42-lead SOJ (Small Outline J-Lead) package, suitable for surface mounting. Typical applications include consumer electronics and industrial control systems requiring high-density memory solutions. The operating temperature range is 0°C to 70°C, with a supply voltage of 4.5V to 5.5V.

Additional Information

Series: TMS416160RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length27.3050
Width10.1600
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max60.0000000000000000
Additional_FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I_O_TypeCOMMON
JESD_30_CodeR-PDSO-J42
Memory_Density16777216.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization1MX16
Memory_Width16
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals42
Number_of_Words1048576.0000000000000000
Number_of_Words_Code1M
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Output_Characteristics3-State
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeSOJ
Package_Equivalence_CodeSOJ42,.44
Package_ShapeRectangular
Package_StyleSMALL OUTLINE
Refresh_Cycles4096
Seated_Height_Max3.7600
Self_RefreshNo
Standby_Current_Max0.001000000000000
Supply_Current_Max90.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormJ BEND
Terminal_Pitch1.270
Terminal_PositionDual

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