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TMS416100-80DGB

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TMS416100-80DGB

Fast Page DRAM, 16MX1, 80ns, CMOS, PDSO24

Manufacturer: Texas Instruments

Categories: DRAMs

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Texas Instruments TMS416100-80DGB is a 16M x 1 bit Fast Page Mode DRAM. This CMOS component features an 80ns maximum access time and supports RAS-only and CAS-before-RAS refresh modes. The memory organization is 16M words by 1 bit, offering a total density of 16,777,216 bits. Operating within a 4.5V to 5.5V supply voltage range, it is designed for asynchronous operation. This device is housed in a 24-lead PDSO (TSOP2-R) package with a 1.27mm terminal pitch. Applications for this type of memory include computing systems and embedded control platforms requiring high-speed data access. The operating temperature range is 0°C to 70°C.

Additional Information

Series: TMS416100RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length17.1400
Width7.6200
TechnologyCMOS
Access_ModeFAST PAGE
Access_Time_Max80.0000000000000000
Additional_FeatureRAS ONLY; CAS BEFORE RAS REFRESH
JESD_30_CodeR-PDSO-G24
Memory_Density16777216.0000000000000000
Memory_IC_TypeFAST PAGE DRAM
Memory_Organization16MX1
Memory_Width1
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals24
Number_of_Words16777216.0000000000000000
Number_of_Words_Code16m
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeTSOP2-R
Package_ShapeRectangular
Package_StyleSMALL OUTLINE, THIN PROFILE
Refresh_Cycles4096
Seated_Height_Max1.2000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormGull Wing
Terminal_Pitch1.270
Terminal_PositionDual

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