TMS4108-20NL1
Page Mode DRAM, 8KX1, 200ns, MOS, PDIP16Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS4108 is an 8K x 1-bit page mode Dynamic Random Access Memory (DRAM) device. This MOS technology component features a maximum access time of 200ns and operates with separate input/output. The TMS4108 series offers a memory organization of 8K words by 1 bit, utilizing a page mode operation for enhanced data throughput. Housed in a 16-lead Plastic Dual In-line Package (PDIP), this through-hole device is suitable for applications requiring cost-effective memory solutions. Its refresh cycles are 64, and it operates within a temperature range of 0°C to 70°C. This component finds application in various electronic systems, including consumer electronics and industrial control.
Additional Information
Series: TMS4108RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 200.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-PDIP-T16 |
| Memory_Density | 8192.0000000000000000 |
| Memory_IC_Type | PAGE MODE DRAM |
| Memory_Organization | 8KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 16 |
| Number_of_Words | 8192.0000000000000000 |
| Number_of_Words_Code | 8k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP16,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 64 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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