TMS4060JR
DRAM, 4KX1, 300ns, MOS, CDIP22Manufacturer: Texas Instruments
Categories: DRAMs
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The Texas Instruments TMS4060JR is a 4096 x 1-bit dynamic random-access memory (DRAM) component from the TMS4060 series. This MOS technology device features a maximum access time of 300 nanoseconds and operates with separate input/output. The memory organization is 4K x 1, providing a total density of 4096 bits. Encased in a 22-terminal ceramic dual in-line package (CDIP22), it is designed for through-hole mounting with a terminal pitch of 2.54 mm. Operating across a temperature range of -55°C to +85°C, it requires a typical supply current of 80 mA and utilizes 64 refresh cycles. This component finds application in various computing and embedded systems.
Additional Information
Series: TMS4060RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 300.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T22 |
| Memory_Density | 4096.0000000000000000 |
| Memory_Organization | 4KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 22 |
| Number_of_Words | 4096.0000000000000000 |
| Number_of_Words_Code | 4k |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP22,.4 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 64 |
| Supply_Current_Max | 80.000000000000000 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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