TMS4030NL
DRAM, 4KX1, 300ns, MOS, PDIP22Manufacturer: Texas Instruments
Categories: DRAMs
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Texas Instruments TMS4030 Series DRAM, part number TMS4030NL, is a 4K x 1 MOS dynamic random-access memory device. This component features a maximum access time of 300ns and utilizes separate I/O. The TMS4030NL is housed in a 22-lead plastic dual in-line package (PDIP) with a terminal pitch of 2.54mm, designed for through-hole mounting. Its memory organization is 4K words, and it requires 64 refresh cycles. Operating within a temperature range of 0°C to 70°C, this component is suitable for applications in consumer electronics and industrial control systems where reliable memory storage is essential. The output characteristics are 3-state, and it has a maximum supply current of 60mA.
Additional Information
Series: TMS4030RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | MOS |
| Access_Time_Max | 300.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-PDIP-T22 |
| Memory_Density | 4096.0000000000000000 |
| Memory_Organization | 4KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 22 |
| Number_of_Words | 4096.0000000000000000 |
| Number_of_Words_Code | 4k |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP22,.4 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Refresh_Cycles | 64 |
| Supply_Current_Max | 60.000000000000000 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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